2N7002E NXP Semiconductors, 2N7002E Datasheet
2N7002E
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2N7002E Summary of contents
Page 1
... N-channel TrenchMOS FET Rev. 03 — 28 April 2006 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Surface-mounted package 1.3 Applications Logic level translator 1.4 Quick reference data DSon 2 ...
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... V; see pulsed see see Figure pulsed Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET Min - - - - Figure 2 and 3 - Figure 2 - Figure © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Version ...
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... Product data sheet 03aa17 120 I der (%) 80 40 150 200 Fig 2. Normalized continuous drain current Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET 100 150 -------------------- - 100 % der function of solder point temperature 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 2N7002E_3 Product data sheet Conditions see Figure Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET Min Typ Max - - 150 [ 350 003aab358 - (s) p © ...
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... MHz see Figure 250 ; 300 mA see Figure 300 mA; dI /dt = 100 Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET Min Typ Max and 2 ...
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... drain current; typical values 2.4 a 1.8 1.2 0 120 R DSon a = ----------------------------- - R DSon 25 C factor as a function of junction temperature © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E 03ai14 4 0 (A) D 03aa28 180 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab359 0.6 0.8 Q (nC) G Fig 12. Gate charge waveform definitions Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET 003aab100 min typ max GS(pl) V GS(th) ...
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... Fig 14. Input, output and reverse transfer capacitances Rev. 03 — 28 April 2006 N-channel TrenchMOS FET MHz function of drain-source voltage; typical values © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E 03ai18 C iss C oss C rss ( ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB Rev. 03 — 28 April 2006 N-channel TrenchMOS FET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E SOT23 ISSUE DATE 04-11-04 06-03- ...
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... Product data sheet - Product data - Rev. 03 — 28 April 2006 N-channel TrenchMOS FET Doc. number - , Q and values modified rss 9397 750 14944 9397 750 09095 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. 2N7002E Supersedes 2N7002E_2 2N7002E- ...
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... Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 03 — 28 April 2006 2N7002E N-channel TrenchMOS FET © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands 2N7002E Date of release: 28 April 2006 Document number: 2N7002E_3 ...