2N7002PV NXP Semiconductors, 2N7002PV Datasheet - Page 9

• Manufacturer Part Number: 2N7002PV
• Description: Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2N7002PV
Product data sheet
Fig 14. Per transistor: Gate-source voltage as a
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
V
(V)
(1) T
(2) T
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
function of gate charge; typical values
V
D
amb
amb
GS
= 300 mA; V
= 0 V
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
S
= 25 °C
1.2
0.8
0.4
0.0
0.6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa025
G
(nC)
0.8
Rev. 1 — 5 August 2010
0.4
Fig 15. Per transistor: Gate charge waveform
(1)
0.8
V
definitions
(2)
V
SD
V
V
V
GS(pl)
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DS
GS(th)
GS
60 V, 350 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
2N7002PV
© NXP B.V. 2010. All rights reserved.
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