2N7002 NXP Semiconductors, 2N7002 Datasheet

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology

2N7002

Manufacturer Part Number
2N7002
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
Table 1.
2. Pinning information
Table 2.
Symbol
V
I
P
Static characteristics
R
Pin
1
2
3
D
DS
tot
DSon
Symbol Description
G
S
D
Quick reference data
Pinning information
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
gate
source
drain
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Suitable for logic level gate drive
sources
Very fast switching
Logic level translators
Conditions
25 °C ≤ T
V
see
T
V
see
sp
GS
GS
= 25 °C; see
Figure 3
Figure
= 10 V; T
= 10 V; I
j
Simplified outline
≤ 150 °C
6; see
D
sp
= 500 mA; T
SOT23 (TO-236AB)
= 25 °C; see
Figure 2
Figure 8
1
3
j
= 25 °C;
Figure
2
1;
Surface-mounted package
Trench MOSFET technology
High-speed line drivers
Graphic symbol
Min
-
-
-
-
mbb076
G
Product data sheet
Typ
-
-
-
2.8
D
S
Max
60
300
0.83
5
Unit
V
mA
W

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2N7002 Summary of contents

Page 1

... V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching 1.3 Applications  ...

Page 2

... Figure °C; see Figure °C sp ≤ 10 µs; T pulsed ° All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET Version SOT23 [1] Min Max - kΩ -30 30 -40 40 Figure 1 ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 60 V, 300 mA N-channel Trench MOSFET 120 der 100 Normalized total power dissipation as a function of solder point temperature V (V) DS 2N7002 03aa17 150 200 T (°C) sp 003aab350 µs p 100 µ 100 ms ...

Page 4

... Product data sheet Conditions Mounted on a printed-circuit board; minimum footprint ; vertical in still air see Figure All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET Min Typ Max - - 350 - - 150 003aab351 δ ...

Page 5

... G(ext 300 mA °C; see Figure 300 mA /dt = -100 A/µs S All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET Min Typ Max 2 ...

Page 6

... Drain-source on-state resistance as a function of drain current; typical values 2.4 a 1.8 1.2 0.6 0 − Normalized drain-source on-state resistance factor as a function of junction temperature 2N7002 003aab353 4 0 (A) D 03aa28 120 180 T (°C) j © NXP B.V. 2011. All rights reserved ...

Page 7

... All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 60 V, 300 mA N-channel Trench MOSFET min typ gate-source voltage - function of drain-source voltage; typical values © NXP B.V. 2011. All rights reserved. 2N7002 003aab100 max 3 (V) 003aab357 C iss C oss C rss ...

Page 8

... All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 60 V, 300 mA N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION 2N7002 SOT23 ISSUE DATE 04-11-04 06-03-16 © NXP B.V. 2011. All rights reserved ...

Page 9

... Rev. 7 — 8 September 2011 60 V, 300 mA N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot023_fw © NXP B.V. 2011. All rights reserved. 2N7002 ...

Page 10

... Product data sheet Product specification HZG336 Product specification Product specification - All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET Supersedes 2N7002 v.6 2N7002 v.5 2N7002 v.4 2N7002 v.3 2N7002 v.2 2N7002 v.1 - © NXP B.V. 2011. All rights reserved ...

Page 11

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 7 — 8 September 2011 2N7002 60 V, 300 mA N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002 All rights reserved. Date of release: 8 September 2011 Document identifier: 2N7002 ...

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