2N7002 NXP Semiconductors, 2N7002 Datasheet - Page 2

• Manufacturer Part Number: 2N7002
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
2N7002
Product data sheet
Type number
2N7002
Type number
2N7002
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
j
stg
DS
DGR
GS
GSM
tot
% = placeholder for manufacturing site code
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
peak gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
storage temperature
source current
peak source current
Package
Name
TO-236AB
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 8 September 2011
Conditions
25 °C ≤ T
25 °C ≤ T
pulsed; t
V
see
V
pulsed; t
Figure 3
T
T
pulsed; t
sp
sp
GS
GS
= 25 °C; see
= 25 °C
Figure 3
= 10 V; T
= 10 V; T
p
p
p
j
j
≤ 50 µs; δ = 0.25
≤ 10 µs; T
≤ 10 µs; T
≤ 150 °C
≤ 150 °C; R
Marking code
12%
sp
sp
= 25 °C; see
= 100 °C; see
Figure 2
sp
sp
GS
= 25 °C; see
= 25 °C
= 20 kΩ
60 V, 300 mA N-channel Trench MOSFET
[1]
Figure
Figure 1
1;
Min
-
-
-30
-40
-
-
-
-
-65
-65
-
-
© NXP B.V. 2011. All rights reserved.
2N7002
SOT23
150
150
Version
Max
60
60
30
40
300
190
1.2
0.83
300
1.2
Unit
V
V
V
V
mA
mA
A
W
°C
°C
mA
A
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