BSH103 NXP Semiconductors, BSH103 Datasheet - Page 5

• Manufacturer Part Number: BSH103
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1998 Feb 11
V
V
I
I
R
C
C
C
Q
Q
Q
Switching times
t
t
t
t
t
t
Source-drain diode
V
t
SYMBOL
j
DSS
GSS
d(on)
f
on
d(off)
r
off
rr
(BR)DSS
GSth
SD
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
MOS transistor
G
GS
GD
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
source-drain diode forward
voltage
reverse recovery time
PARAMETER
V
V
V
V
V
V
V
V
V
V
V
I
V
T
V
T
V
I
V
I
V
I
V
I
V
I
V
I
V
I
D
D
D
D
D
D
D
S
amb
amb
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
GS
GS
GS
GS
GS
GS
GD
= 0.5 A; T
= 0.5 A; R
= 0.5 A; R
= 0.5 A; R
= 0.5 A; R
= 0.5 A; R
= 0.5 A; R
= 0.5 A; di/dt = 100 A/ s
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 0; V
= 0; V
= 0; V
= 4.5 V; V
= 0 to 8 V; V
= 0 to 8 V; V
= 0 to 8 V; V
= 8 to 0 V; V
= 8 to 0 V; V
= 8 to 0 V; V
= 0; I
= 0; I
= V
= 0; V
= 8 V; V
= 15 V; I
= 15 V; I
= 25 C
= 25 C
DS
D
S
5
CONDITIONS
DS
DS
DS
; I
DS
= 0.5 A
= 10 A
amb
gen
gen
gen
gen
gen
gen
D
D
D
D
D
D
= 24 V; f = 1 MHz
= 24 V; f = 1 MHz
= 24 V; f = 1 MHz
= 24 V
DS
= 1 mA
DD
= 0.5 A;
= 0.5 A;
= 0.5 A
= 0.5 A
= 0.25 A
= 6
= 6
= 6
= 6
= 6
= 6
= 25 C
DD
DD
DD
DD
DD
DD
= 0
= 15 V;
= 15 V;
= 15 V;
= 15 V;
= 15 V;
= 15 V;
= 15 V;
30
0.4
MIN.
83
27
14
2100
95
670
2.5
3.5
6
20
7
27
25
TYP.
Product specification
100
0.4
0.5
0.6
1
MAX.
BSH103
100
V
V
nA
nA
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
ns
ns
V
ns
UNIT