BSH202 NXP Semiconductors, BSH202 Datasheet - Page 3

• Manufacturer Part Number: BSH202
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
ID% = 100 I
120
100
120
100
0.001
80
60
40
20
80
60
40
20
0.01
I
0
0
0.1
Fig.2. Normalised continuous drain current.
10
D
1
0
0
& I
0.1
Normalised Power Dissipation, PD (%)
Normalised Drain Current, ID (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
Fig.1. Normalised power dissipation.
DM
RDS(on) = VDS/ ID
= f(V
25
25
PD% = 100 P
D
/I
D 25 ˚C
DS
Ambient Temperature, Ta (C)
Ambient Temperature, Ta (C)
Drain-Source Voltage, VDS (V)
); I
50
50
= f(T
1
DM
single pulse; parameter t
a
D
); conditions: V
75
75
/P
D 25 ˚C
d.c.
100
100
= f(T
10
a
= 25 ˚C
a
)
tp = 10us
125
125
GS
100 ms
100 us
1 ms
10 ms
BSH202
-10 V
150
150
100
p
3
1000
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig.5. Typical output characteristics, T
100
0.1
-1
3
2
1
0
Fig.6. Typical on-state resistance, T
10
0
1
1E-06
0
Drain-Source On Resistance, RDS(on) (Ohms)
0
Drain current, ID (A)
Peak Pulsed Drain Current, IDM (A)
Tj = 25 C
D = 0.5
0.1
0.02
single pulse
Fig.4. Transient thermal impedance.
-2.5 V
-0.2
0.05
1E-05
0.2
VGS = -10 V
Z
R
th j-a
I
DS(ON)
D
-2.7 V
-0.5
= f(V
Drain-Source Voltage, VDS (V)
-0.4
Drain Current, ID (A)
1E-04
= f(t); parameter D = t
-2.9 V
= f(I
DS
Pulse width, tp (s)
-0.6
1E-03
); parameter V
D
); parameter V
-3.1 V
-1
-4.5 V
-0.8
1E-02
-3.3 V
P
Product specification
D
1E-01
-1
-3.5 V
-1.5
GS
tp
VGS = -10 V
p
GS
T
/T
Tj = 25 C
-1.2
j
1E+00 1E+01
D = tp/T
= 25 ˚C .
j
BSH202
-4.5 V
BSH202
-2.5 V
= 25 ˚C .
-3.5 V
-2.7 V
BSH202
-2.9 V
-3.1 V
-3.3 V
Rev 1.000
-1.4
-2