BSN20 NXP Semiconductors, BSN20 Datasheet
BSN20
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BSN20 Summary of contents
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... BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSN20 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ...
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... T = 100 Figure pulsed Figure Figure pulsed Rev. 03 — 26 June 2000 BSN20 Typ Max Unit 50 V 173 mA 0.83 W 150 C 2.8 15 3.8 20 Min Max Unit 173 ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 03 — 26 June 2000 BSN20 03aa25 120 (%) 100 100 125 150 ...
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... Product specification N-channel enhancement mode field-effect transistor Conditions mounted on a metal clad substrate; Figure 4 mounted on a printed circuit board; minimum footprint Z th(j-sp) (K/W) Mounted on a metal clad substrate. pulse duration. Rev. 03 — 26 June 2000 BSN20 Value Unit 150 K/W 350 K/W 03aa47 ...
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... 180 mA Figure 180 mA /dt = 100 Rev. 03 — 26 June 2000 BSN20 Typ Max Unit 3.5 V 0.01 1 100 nA 2 3.8 20 170 ...
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... 10V 0.8 0.6 0.4 0.2 0 0.5 0.6 0.7 - (A) R DSon a = --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 03 — 26 June 2000 BSN20 03aa53 V DS > DSon 150 ( ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aa54 C iss , C oss , MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 03 — 26 June 2000 BSN20 03aa89 ( min typ ...
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... Fig 13. Source (diode forward) current as a function of source-drain (diode forward) 9397 750 07213 Product specification N-channel enhancement mode field-effect transistor and 150 voltage; typical values. Rev. 03 — 26 June 2000 BSN20 03aa55 © Philips Electronics N.V. 2000. All rights reserved ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 03 — 26 June 2000 BSN20 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT23 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000626 HZG303 Product specification; third version; supersedes BSN20_2 of 970618. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970618 - Product specification; second version. 01 19901031 - Product specification; initial version. ...
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... Rev. 03 — 26 June 2000 BSN20 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 03 — 26 June 2000 BSN20 © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 June 2000 Document order number: 9397 750 07213 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSN20 ...