BSS84 NXP Semiconductors, BSS84 Datasheet - Page 4

• Manufacturer Part Number: BSS84
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
BSS84_6
Product data sheet
Fig 3.
R
(K/W)
th(j-a)
10
10
10
10
3
2
10
1
1
Transient thermal impedance from junction to ambient as a function of pulse duration
6
= 0.75
0.05
0.02
0.01
0.2
0.5
0.1
0
10
5
Table 6.
[1]
Symbol
R
Fig 2.
th(j-a)
Mounted on a PCB, vertical in still air.
10
4
Power derating curve
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
10
3
Rev. 06 — 16 December 2008
(mW)
P
300
200
100
tot
0
0
10
2
P-channel enhancement mode vertical DMOS transistor
50
10
Conditions
see
1
Figure 3
100
1
150
T
amb
mld199
10
( C)
[1]
200
Min
-
P
t
p
10
Typ
-
T
2
© NXP B.V. 2008. All rights reserved.
t
p
=
(s)
mld250
BSS84
T
t
Max
500
p
t
10
3
Unit
K/W
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