BSS84AK NXP Semiconductors, BSS84AK Datasheet
BSS84AK
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BSS84AK Summary of contents
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... BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 ...
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... Simplified outline SOT23 (TO-236AB) Description plastic surface-mounted package; 3 leads Marking code %VS All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Graphic symbol sym146 Version SOT23 [1] © NXP B.V. 2011. All rights reserved. ...
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... I der (%) -75 - Normalized continuous drain current as a function of junction temperature BSS84AK Max Unit - -180 mA -120 mA -0.7 A 350 mW 420 mW 1140 mW 150 °C 150 °C 150 °C -180 mA 1000 V 001aao122 125 ...
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... Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS84AK Product data sheet -1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET 001aao123 (1) (2) (3) (4) (5) -10 ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AK Product data sheet Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Min Typ Max [1] - 310 370 [2] - 260 300 - ...
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... - Ω °C G(ext -115 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Min Typ Max - -1.1 -1 ° ...
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... R DSon (Ω) 10 (4) ( -0.3 -0.4 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET (2) (1) 0 -0.5 -1.0 -1.5 -2 ° (1) minimum values (2) typical values (3) maximum values Sub-threshold drain current as a function of ...
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... C (1) (pF) ( - MHz (1) C iss (2) C oss (3) C rss as a function of drain-source voltage; typical values BSS84AK 001aao129 120 180 T (°C) j 001aao131 2 -10 V (V) DS © NXP B.V. 2011. All rights reserved ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions -0 (A) -0.2 -0.1 ( -0.4 -0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... BSS84AK Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS84AK v.1 20110523 BSS84AK Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AK 50 V, 180 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BSS84AK All rights reserved. Date of release: 23 May 2011 Document identifier: BSS84AK ...