BST82 NXP Semiconductors, BST82 Datasheet
BST82
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BST82 Summary of contents
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... BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BST82 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ...
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... Figure pulsed Figure Figure pulsed Rev. 03 — 26 July 2000 BST82 Typ Max Unit 100 V 190 mA 0.83 W 150 Min Max Unit 100 V 100 190 ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature. D. Rev. 03 — 26 July 2000 BST82 03aa25 120 100 100 125 150 ------------------ - 100% ...
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... Z th(j-sp) (K/ 0.2 0.1 10 0.05 0.02 single pulse 1 0 Mounted on a metal substrate. pulse duration. Rev. 03 — 26 July 2000 BST82 Value Unit 150 K/W 350 K/W 03aa57 (s) © Philips Electronics N.V. 2000. All rights reserved. ...
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... 300 mA Figure 300 mA /dt = 100 Rev. 03 — 26 July 2000 BST82 Typ Max Unit 130 3.5 V 0.01 1 100 350 ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa64 10V 0.3 0 --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 03 — 26 July 2000 BST82 03aa65 0 > DSon (A) 0.6 0 0.4 150 o C 0.3 0.2 0 ...
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... C iss , C oss , rss (pF) 150 o C 0.5 0 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 03 — 26 July 2000 BST82 03aa37 ( min typ 0 ...
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... Product specification N-channel enhancement mode field-effect transistor 0 (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0 and 150 voltage; typical values. Rev. 03 — 26 July 2000 BST82 03aa67 150 0.6 0.8 1 1.2 1 (V) © Philips Electronics N.V. 2000. All rights reserved ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 03 — 26 July 2000 BST82 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT23 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000726 HZG303 Product specification; third version; supersedes BST82_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970623 - Product specification; second version. 01 19901031 - Product specification; initial version. ...
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... Rev. 03 — 26 July 2000 BST82 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 03 — 26 July 2000 BST82 © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07223 N-channel enhancement mode field-effect transistor Printed in The Netherlands BST82 ...