NX7002AKW NXP Semiconductors, NX7002AKW Datasheet - Page 9
NX7002AKW
Manufacturer Part Number
NX7002AKW
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.NX7002AKW.pdf
(15 pages)
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NX7002AKW
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= 0.2 A; V
= 0 V
j
j
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
0.20
0.15
0.10
0.05
S
= 25 °C
0.6
0
0
All information provided in this document is subject to legal disclaimers.
Q
017aaa477
G
(nC)
0.8
Rev. 1 — 1 March 2012
0.4
(1)
Fig 15. Gate charge waveform definitions
0.8
(2)
V
V
SD
V
V
V
GS(pl)
017aaa478
DS
GS(th)
GS
(V)
60 V, single N-channel Trench MOSFET
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
NX7002AKW
G(tot)
Q
GD
© NXP B.V. 2012. All rights reserved.
017aaa137
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