PHB32N06LT NXP Semiconductors, PHB32N06LT Datasheet - Page 5

• Manufacturer Part Number: PHB32N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB32N06LT_2
Product data sheet
Fig 4.
Fig 6.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
40
30
20
10
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
T
j
= 25 °C
0.5
1
min
10 V
1.0
typ
5 V
2
4 V
max
1.5
V
GS
V
GS
V
03aa36
= 2.5 V
DS
(V)
3.5 V
03ah49
(V)
3 V
Rev. 02 — 30 November 2009
2.0
3
Fig 5.
Fig 7.
(A)
(A)
I
I
D
S
40
30
20
10
40
30
20
10
0
0
function of gate-source voltage; typical values
voltage; typical values
Transfer characteristics: drain current as a
Source current as a function of source-drain
0
0
V
V
DS
GS
> I
= 0 V
N-channel TrenchMOS logic level FET
D
× R
0.3
1
DSon
175 °C
175 °C
0.6
2
PHB32N06LT
T
j
= 25 °C
0.9
T
3
© NXP B.V. 2009. All rights reserved.
j
= 25 °C
V
V
GS
SD
03ah51
03ah52
(V)
(V)
1.2
4
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