PHB32N06LT NXP Semiconductors, PHB32N06LT Datasheet - Page 7

• Manufacturer Part Number: PHB32N06LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
PHB32N06LT_2
Product data sheet
Symbol
R
R
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
Fig 13. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
−3
1
10
−5
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
(pF)
C
Conditions
see
mounted on printed-circuit board;
minimum footprint
10
10
10
10
10
4
3
2
10
−4
−1
Figure 13
Rev. 02 — 30 November 2009
10
1
−3
10
10
−2
V
DS
C
C
C
(V)
iss
oss
rss
03ah53
N-channel TrenchMOS logic level FET
10
P
10
2
−1
t
p
T
t
Min
-
-
p
(s)
δ =
PHB32N06LT
03ah47
t
T
p
t
1
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
1.55
-
Unit
K/W
K/W
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