PHB47NQ10T NXP Semiconductors, PHB47NQ10T Datasheet
PHB47NQ10T
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PHB47NQ10T Summary of contents
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... PHB47NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 25 February 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Product data sheet Simplified outline [1] SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET Graphic symbol mb G mbb076 © NXP B.V. 2010. All rights reserved. ...
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... Ω; see unclamped 0.1 ms 03aa24 ( 150 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET Min - - -20 - and 2 - Figure -55 - ≤ sup Figure 4 3 ...
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... Single pulse −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET (A) 10 prior to avalanche = 150 ° −3 −2 − ...
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... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET Min Typ 100 - 0. ...
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... V (V) DS Fig 7. 003aaa078 g (S) 98 (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET 100 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... Fig 11. Drain-source on-state resistance as a function 003aaa103 V GS (V) 100 140 180 T (°C) j Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET 65 6 ...
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... V (V) DS Fig 15. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET 003aaa106 = 175 ° °C 0.2 0.4 0.6 0.8 1.0 1 © NXP B.V. 2010. All rights reserved. ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... PHB47NQ10T_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data - All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T Supersedes PHP_PHB_47NQ10T-01 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHB47NQ10T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 February 2010 Document identifier: PHB47NQ10T_2 ...