PHK5NQ15T NXP Semiconductors, PHK5NQ15T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHK5NQ15T

Manufacturer Part Number
PHK5NQ15T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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PHK5NQ15T
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1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
PHK5NQ15T
N-channel TrenchMOS standard level FET
Rev. 4 — 23 December 2011
Low conduction losses due to low
on-state resistance
DC-to-DC convertors switching
Conditions
T
T
see
T
V
see
V
T
j
sp
sp
j
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; V
= 25 °C; see
Figure 3
Figure
= 10 V; I
= 10 V; I
9; see
j
D
D
≤ 150 °C
GS
= 5 A; T
= 5 A; V
Figure 11
Figure 2
= 10 V; see
Figure 10
j
DS
= 25 °C;
= 75 V;
Figure
1;
General purpose switching
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
56
12
Max
150
5
6.25
75
-
W
Unit
V
A
mΩ
nC

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PHK5NQ15T Summary of contents

Page 1

... PHK5NQ15T N-channel TrenchMOS standard level FET Rev. 4 — 23 December 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... Figure °C; see Figure °C sp ≤ 10 µ °C; pulsed All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T Graphic symbol mbb076 Version SOT96-1 Min Max - 150 = 20 kΩ - 150 GS -20 ...

Page 3

... T (°C) sp Fig All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET 120 P der (%) 100 Normalized total power dissipation as a function of solder point temperature =10 μ s ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration PHK5NQ15T Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 minimum footprint; mounted on printed-circuit board −2 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T Min Typ Max Unit - - 20 K K/W 003aaa243 t p δ ...

Page 5

... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T Min Typ Max Unit 134 - - V 150 - - 4 ...

Page 6

... V (V) DS Fig 6. 03aa35 V typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET ( 150 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 7

... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET −75 − factor as a function of junction temperature − ...

Page 8

... Fig 13. Source current as a function of source-drain voltage; typical values PHK5NQ15T Product data sheet (A) 3 150 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET 003aaa247 = 25 ° 0 (V) SD © NXP B.V. 2011. All rights reserved ...

Page 9

... REFERENCES JEDEC JEITA MS-012 All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET θ detail ...

Page 10

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T Supersedes PHK5NQ15T v.3 PHK5NQ15T v.2 © NXP B.V. 2011. All rights reserved ...

Page 11

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 23 December 2011 PHK5NQ15T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 December 2011 Document identifier: PHK5NQ15T ...

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