PHP23NQ11T NXP Semiconductors, PHP23NQ11T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP23NQ11T

Manufacturer Part Number
PHP23NQ11T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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PHP23NQ11T
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PHP23NQ11T
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Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DSon
GD
Higher operating power due to low
thermal resistance
DC-to-DC convertors
PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
T
Conditions
see
T
V
V
see
V
see
j
mb
mb
GS
DS
GS
≥ 25 °C; T
= 25 °C; V
Figure 1
= 25 °C; see
Figure 11
Figure 9
= 80 V; T
= 10 V; I
= 10 V; I
j
D
D
and
and
≤ 175 °C
j
= 25 °C;
= 13 A; T
GS
= 23 A;
3
Figure 2
10
= 10 V;
Low conduction losses due to low
on-state resistance
Switched-mode power supplies
j
= 25 °C;
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
10
49
Max
110
23
100
-
70
Unit
V
A
W
nC
mΩ

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PHP23NQ11T Summary of contents

Page 1

... PHP23NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 25 February 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... ° j(init Ω unclamped 0.1 ms All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET Graphic symbol Min - - -20 Figure 1 - and 3 - Figure ...

Page 3

... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03ao51 = 10 μ ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PHP23NQ11T_2 Product data sheet Conditions see Figure 4 single pulse −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET Min Typ - - - 60 03ao50 t p δ ...

Page 5

... /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET Min Typ 110 - 99 - Figure Figure Figure ...

Page 6

... T (°C) j Fig 8. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET V > DSon 150 ° ...

Page 7

... Fig 10. Normalized drain-source on-state resistance 03ao57 (pF (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET - factor as a function of junction temperature ...

Page 8

... PHP23NQ11T_2 Product data sheet ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET 03ao55 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 10

... PHP23NQ11T_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data - All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T Supersedes PHP23NQ11T_1 - © NXP B.V. 2010. All rights reserved ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 February 2010 PHP23NQ11T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 February 2010 Document identifier: PHP23NQ11T_2 ...

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