PHP45NQ10T NXP Semiconductors, PHP45NQ10T Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP45NQ10T

Manufacturer Part Number
PHP45NQ10T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
P
Static characteristics
R
Dynamic characteristics
Q
I
D
DS
tot
DSon
GD
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
PHP45NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 8 July 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
gate-drain charge V
Conditions
T
T
T
V
T
V
j
mb
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C; V
= 25 °C
= 10 V; I
= 10 V; I
= 80 V; T
j
D
D
≤ 175 °C
j
= 25 °C
GS
= 25 A;
= 45 A;
= 10 V
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
22
25
Max Unit
100
47
150
25
-
V
A
W
mΩ
nC

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PHP45NQ10T Summary of contents

Page 1

... PHP45NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 8 July 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET Min - = 20 kΩ - -55 - ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET prior to avalanche = 150 ° −3 −2 − Single-shot avalanche rating; avalanche ...

Page 5

... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T Min Typ Max 100 - - - - 500 - 0.05 ...

Page 6

... (V) GS Fig 9. 014aab210 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET 0.16 4 4.2 4.4 4.6 DS(on) (Ω) 4.8 0.12 0.08 0. °C j Drain-source on-state resistance as a function of drain current ...

Page 7

... Fig 13. Input, output and reverse transfer capacitances 014aab214 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET (pF −1 10 ...

Page 8

... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 9

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHP45NQ10T separated from data sheet PHB_PHP_PHW45NQ10T v.1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T ...

Page 10

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHP45NQ10T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 July 2010 Document identifier: PHP45NQ10T ...

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