PHP79NQ08LT NXP Semiconductors, PHP79NQ08LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHP79NQ08LT

Manufacturer Part Number
PHP79NQ08LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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PHP79NQ08LT
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PHP79NQ08LT
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
General purpose power switching
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 — 26 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
gate-drain charge V
Conditions
T
T
T
V
T
see
V
see
j
mb
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C; see
Figure 10
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 5 V; I
= 60 V; T
11; see
D
j
D
≤ 175 °C
= 25 A;
j
= 25 °C;
GS
= 25 A;
Figure
Figure 2
= 10 V
Figure 12
9;
Suitable for logic level gate drive
sources
Motors, lamps and solenoids
Uninterruptible power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
14
14
Max Unit
75
73
157
16
-
V
A
W
mΩ
nC

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PHP79NQ08LT Summary of contents

Page 1

... PHP79NQ08LT N-channel TrenchMOS logic level FET Rev. 03 — 26 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... ° see Figure °C; see Figure °C mb All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT78 Min Typ Max - - 75 - ...

Page 3

... Ω sup GS unclamped 03aa24 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET Min Typ - - = 0.07 ms; p 120 P der (%) ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PHP79NQ08LT Product data sheet Conditions see Figure 4 vertical in still air −3 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET Min Typ Max - - 0. 003aaa911 t p δ ...

Page 5

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET Min Typ Max 0 2.3 1.1 1 0.02 ...

Page 6

... T (°C) j Fig 8. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET 003aaa976 25 °C = 175 ° (V) GS 03aa35 min ...

Page 7

... Fig 10. Normalized drain-source on-state resistance 003aaa915 (nC) G Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET 2.4 a 1.6 0.8 0 − factor as a function of junction temperature V DS ...

Page 8

... V (V) DS Fig 14. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET 003aaa916 °C 175 ° 0.3 0.6 0 © NXP B.V. 2010. All rights reserved. ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHP79NQ08LT _3 20100426 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 26 April 2010 PHP79NQ08LT N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2010 Document identifier: PHP79NQ08LT ...

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