PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet - Page 6

• Manufacturer Part Number: PHT4NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09581
Product data
Fig 6. Output characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
(A)
R DSon
I D
T
T
( )
j
j
10
0.6
0.4
0.2
= 25 C
0.8
= 25 C
8
4
2
6
0
function of drain-source voltage; typical values.
1
of drain current; typical values.
0
0
0
4.4 V
T j = 25 C
T j = 25 C
4.8 V
0.4
2
5 V
0.8
4
5.5 V
1.2
6
6V
V GS = 10 V
V GS = 10 V
1.6
8
I D (A)
5.5 V
V DS (V)
4.8 V
4.6 V
4.2 V
03aa91
6 V
5 V
03aa90
10
2
Rev. 02 — 2 May 2002
Fig 7. Transfer characteristics: drain current as a
Fig 9. Normalized drain-source on-state resistance
T
(A)
a
I D
a
j
= 25 C and 150 C; V
=
1.5
2.5
0.5
10
function of gate-source voltage; typical values.
factor as a function of junction temperature.
3
2
1
0
8
6
4
2
0
--------------------------- -
R
-60
0
DSon 25 C
R
DSon
V DS > I D X R DSon
0
2
TrenchMOS™ standard level FET
T j = 25 C
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
4
I
D
PHT4NQ10T
R
DSon
150 C
120
6
V GS (V)
T j (
03aa29
03aa92
o
C)
180
8
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