PMF170XP NXP Semiconductors, PMF170XP Datasheet - Page 7

• Manufacturer Part Number: PMF170XP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMF170XP
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
−1.6
−1.2
−0.8
−0.4
D
0.0
–4
–3
–2
–1
0
−60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
0
DSon
–1
(2)
DS
(1)
(2)
(3)
= V
60
GS
(1)
–2
(1)
120
V
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GS
017aaa306
017aaa134
T
j
(V)
(°C)
(2)
Rev. 1 — 2 September 2011
180
–3
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
1.6
1.4
1.2
1.0
0.8
0.6
10
–10
3
2
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
20 V, 1 A P-channel Trench MOSFET
0
GS
–1
= 0 V
60
–10
PMF170XP
(1)
(2)
(3)
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa307
T
017aaa308
j
(V)
(°C)
–10
180
2
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