PMGD290XN NXP Semiconductors, PMGD290XN Datasheet
PMGD290XN
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PMGD290XN Summary of contents
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... Description 1 source (s1) 2 gate (g1) 3 drain (d2) 4 source (s2) 5 gate (g2) 6 drain (d1) PMGD290XN Dual N-channel TrenchMOS™ extremely low level FET Rev. 01 — 26 February 2004 Surface mounted package Dual device Low on-state resistance Driver circuits 0.41 W tot Simplified outline ...
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... C T 150 4 100 4 pulsed Figure pulsed Rev. 01 — 26 February 2004 PMGD290XN Min - = [1] Figure 2 and 3 - [1] Figure Figure [ © ...
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... Dual N-channel TrenchMOS™ extremely low level FET 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current 4 Rev. 01 — 26 February 2004 PMGD290XN 100 150 I D ------------------- = 100 function of solder point temperature. ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 12762 Product data Dual N-channel TrenchMOS™ extremely low level FET Conditions Figure Rev. 01 — 26 February 2004 PMGD290XN Min Typ Max Unit - - 300 K/W 03an28 ...
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... 4 Figure MHz Figure 4 0 Figure Rev. 01 — 26 February 2004 PMGD290XN Min Typ Max 0.5 1 1 100 - 10 100 8 - 290 350 - 464 ...
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... 1 (V) Fig 6. Transfer characteristics: drain current as a 03am97 3 V 3.5 V 4.5 V 1 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 26 February 2004 PMGD290XN 2 > DSon ( 150 C 1 and 150 C; V ...
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... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 26 February 2004 PMGD290XN min typ max 0 0.4 0.8 1 gate-source voltage. 03an00 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 26 February 2004 PMGD290XN 03an01 0.2 0.4 0 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 0 ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-88 Rev. 01 — 26 February 2004 PMGD290XN detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT363 ISSUE DATE ...
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... Revision history Rev Date CPCN Description 01 20040226 - Product data (9397 750 12762). 9397 750 12762 Product data Dual N-channel TrenchMOS™ extremely low level FET 2.65 0. 2. 1.20 2.40 Rev. 01 — 26 February 2004 PMGD290XN 0.40 0.90 2. MSA432 © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 26 February 2004 Rev. 01 — 26 February 2004 PMGD290XN PMGD290XN Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 February 2004 Document order number: 9397 750 12762 Dual N-channel TrenchMOS™ extremely low level FET PMGD290XN ...