PMGD780SN NXP Semiconductors, PMGD780SN Datasheet - Page 8

• Manufacturer Part Number: PMGD780SN
• Description: Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMGD780SN_2
Product data sheet
Fig 12. Source current as a function of source-drain
(A)
I
S
0.8
0.6
0.4
0.2
1
0
T
voltage; typical values
0
V
j
= 25 °C and 150 °C; V
GS
= 0 V
0.3
150 °C
0.6
GS
= 0 V
0.9
T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
V
SD
03an91
(V)
1.2
Rev. 02 — 19 April 2010
Fig 13. Gate-source voltage as a function of gate
Dual N-channel μTrenchMOS standard level FET
V
(V)
GS
10
8
6
4
2
0
I
charge; typical values
0
D
I
T
V
D
= 1 A; V
j
DS
= 1 A
= 25 °C
= 30 V
0.3
DD
= 30 V
0.6
PMGD780SN
0.9
© NXP B.V. 2010. All rights reserved.
Q
G
03an93
(nC)
1.2
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