PML340SN NXP Semiconductors, PML340SN Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PML340SN

Manufacturer Part Number
PML340SN
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
2. Pinning information
Table 1.
Pin
1, 2, 3
4
5, 6, 7, 8
Pinning
Description
source (S)
gate (G)
drain (D)
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
I
I
I
I
I
PML340SN
N-channel TrenchMOS standard level FET
Rev. 01 — 24 August 2006
Standard level threshold
Very low thermal impedance
Primary side switching
V
R
DS
DSon
220 V
386 m
Simplified outline
SOT873-1 (HVSON8)
Transparent
8 7 6 5
1 2 3 4
top view
I
I
I
I
I
Low profile and small footprint
Low on-state resistance
DC-to-DC converters
I
Q
D
GD
7.3 A
= 4.25 nC (typ)
Symbol
mbb076
G
Product data sheet
D
S

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PML340SN Summary of contents

Page 1

... PML340SN N-channel TrenchMOS standard level FET Rev. 01 — 24 August 2006 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET surface-mounted plastic package using TrenchMOS technology. 1.2 Features I Standard level threshold I Very low thermal impedance 1.3 Applications I Primary side switching 1 ...

Page 2

... pulsed unclamped inductive load 3 0.05 ms; V 220 starting Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET Min - - Figure 2 and 3 - Figure 2 - Figure © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 3

... I der (%) 80 40 150 200 Fig 2. Normalized continuous drain current as a Limit DSon Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET 100 150 ------------------- - 100 % der function of mounting base temperature ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PML340SN_1 Product data sheet N-channel TrenchMOS standard level FET Conditions Figure Rev. 01 — 24 August 2006 PML340SN Min Typ Max Unit - - 2.5 K/W 003aab517 ...

Page 5

... MHz see Figure 100 100 ; 5 2 see Figure 3 /dt = 100 120 V R Rev. 01 — 24 August 2006 PML340SN Min Typ Max 220 - - 196 - - and 1 4 100 - 10 100 - ...

Page 6

... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab165 (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET 800 3.8 4 4.2 4.5 DSon 600 V 400 200 drain current; typical values ...

Page 7

... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab166 V = 176 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET min typ max ( GS(pl) ...

Page 8

... Fig 13. Source current as a function of source-drain voltage; typical values PML340SN_1 Product data sheet 003aab167 0 ( Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET (pF MHz function of drain-source voltage ...

Page 9

... 2.3 3.4 1.68 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.42 REFERENCES JEDEC JEITA - - - - - - Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. SOT873 ISSUE DATE ...

Page 10

... Revision history Table 6. Revision history Document ID Release date PML340SN_1 20060824 PML340SN_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 24 August 2006 PML340SN Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 24 August 2006 PML340SN N-channel TrenchMOS standard level FET Trademarks © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. PML340SN All rights reserved. Date of release: 24 August 2006 Document identifier: PML340SN_1 ...

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