PMN27UN NXP Semiconductors, PMN27UN Datasheet - Page 2

• Manufacturer Part Number: PMN27UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 10189
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
D
DM
S
DS
tot
j
DS
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
Quick reference data
Limiting values
Rev. 01 — 27 September 2002
Conditions
25 C
T
T
V
V
V
Conditions
25 C
T
T
T
T
sp
sp
sp
sp
sp
sp
sp
GS
GS
GS
= 25 C; V
= 25 C
= 25 C; V
= 70 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
T
T
j
j
150 C
150 C
Figure 1
D
D
D
GS
GS
GS
= 2 A; T
= 2 A; T
= 1.5 A; T
= 4.5 V
= 4.5 V;
= 4.5 V;
p
j
j
= 25 C
= 25 C
10 s;
j
Figure 2
Figure 2
= 25 C
Figure 3
and
TrenchMOS™ ultra low level FET
3
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
-
-
27
32
39
Min
-
-
-
-
-
-
-
55
55
PMN27UN
Max
20
5.7
1.75
150
34
40
56
Max
20
5.7
4.5
22.9
1.75
+150
+150
1.45
8
2 of 12
Unit
V
A
W
m
m
m
Unit
V
V
A
A
A
W
A
C
C
C