PMN35EN NXP Semiconductors, PMN35EN Datasheet - Page 6

• Manufacturer Part Number: PMN35EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN35EN
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
100
24
16
80
60
40
20
8
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
Drain-source on-state resistance as a function
0
2
j
j
10 V
= 25 °C
= 25 °C
(1)
GS
GS
GS
GS
GS
GS
GS
= 2.7 V
= 2.9 V
= 3.1 V
= 3.8 V
= 4.5 V
= 6.0 V
= 10 V
(2)
1
10
4.5 V
6 V
(3)
2
18
V
GS
3
3.1 V
2.9 V
2.7 V
2.5 V
(4)
(5)
(6)
(7)
I
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= 3.5 V
D
V
017aaa283
017aaa284
DS
(A)
(V)
26
4
Rev. 1 — 20 July 2011
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
10
10
10
10
D
160
120
80
40
–3
–4
–5
–6
0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
0
D
j
= 25 °C; V
= 3 A
j
j
= 150 °C
= 25 °C
30 V, 5.1 A N-channel Trench MOSFET
2
(1)
DS
1
= 5 V
4
(2)
6
(1)
(2)
2
PMN35EN
(3)
V
© NXP B.V. 2011. All rights reserved.
GS
8
017aaa218
017aaa285
V
(V)
GS
(V)
10
3
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