PMR780SN NXP Semiconductors, PMR780SN Datasheet
![Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415248/sot416_3d_sml.gif)
PMR780SN
Available stocks
Related parts for PMR780SN
PMR780SN Summary of contents
Page 1
... Ordering information Table 2: Ordering information Type number Package Name PMR780SN SC-75 PMR780SN N-channel TrenchMOS™ standard level FET Rev. 01 — 5 March 2004 Surface mounted package Low on-state resistance Driver circuits 0.53 W tot Simplified outline ...
Page 2
... V; Figure 100 Figure pulsed Figure Figure pulsed Rev. 01 — 5 March 2004 PMR780SN Min Max - and 3 - 0.55 - 0.35 - 1.1 - 0.53 55 +150 55 +150 - 0.44 - 0.88 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 3
... Product data 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current Rev. 01 — 5 March 2004 PMR780SN N-channel TrenchMOS™ standard level FET 100 150 I D ------------------- = 100 function of solder point temperature. ...
Page 4
... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 12666 Product data N-channel TrenchMOS™ standard level FET Conditions Figure Rev. 01 — 5 March 2004 PMR780SN Min Typ Max Unit - - 235 K/W 03an29 ...
Page 5
... 0.075 A; Figure MHz 0 Figure Rev. 01 — 5 March 2004 PMR780SN Min Typ Max 0 3 100 - 10 100 8 - 780 920 ...
Page 6
... V DS (V) Fig 6. Transfer characteristics: drain current as a 03an89 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 5 March 2004 PMR780SN N-channel TrenchMOS™ standard level FET > DSon (A) 0.8 0.6 0 150 0 ...
Page 7
... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 5 March 2004 PMR780SN N-channel TrenchMOS™ standard level FET min typ 0 0 gate-source voltage. 03an92 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
Page 8
... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 5 March 2004 PMR780SN 03an93 0.3 0.6 0 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 1 ...
Page 9
... 0.5 scale 1.8 0.9 1.75 1 0.5 1.4 0.7 1.45 REFERENCES JEDEC EIAJ SC-75 Rev. 01 — 5 March 2004 PMR780SN N-channel TrenchMOS™ standard level FET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT416 X ...
Page 10
... Product data (9397 750 12666) 9397 750 12666 Product data 2.20 0.60 1.10 0. 0.85 1.50 0.50 1 (3x) MSA438 0.60 (3x) 1.90 Rev. 01 — 5 March 2004 PMR780SN N-channel TrenchMOS™ standard level FET solder lands solder resist occupied area solder paste © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 11
... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 5 March 2004 Rev. 01 — 5 March 2004 PMR780SN PMR780SN Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
Page 12
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 5 March 2004 Document order number: 9397 750 12666 PMR780SN N-channel TrenchMOS™ standard level FET ...