PMV30XN NXP Semiconductors, PMV30XN Datasheet
PMV30XN
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PMV30XN Summary of contents
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... PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching 1.3 Applications ...
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... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Version SOT23 [1] Min Max - 20 -12 12 [1] - 3.2 [1] - 2.1 ≤ 10 µ ...
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... Rev. 1 — 22 June 2011 20 V, 3.2 A N-channel Trench MOSFET 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature (1) (2) (3) (4) (5) ( (V) DS PMV30XN 017aaa124 125 175 T (°C) j 017aaa263 2 10 © NXP B.V. 2011. All rights reserved ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV30XN Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Min Typ Max [1] - 285 330 [2] - 208 240 - ...
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... 4 G(ext ° 0 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Min Typ Max 0 100 - - 100 ...
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... (V) DS Fig 7. 017aaa265 (3) (4) (5) ( (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET – –4 10 (1) (2) (3) –5 10 –6 10 0.0 0.5 1 ° (1) minimum values ...
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... GS Fig 11. Normalized drain-source on-state resistance as 017aaa269 C (pF) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET 1.6 a 1.4 1.2 1.0 0.8 0.6 – function of junction temperature; typical values ...
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... Product data sheet 017aaa271 (nC °C Fig 15. Gate charge waveform definitions 2 (A) 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa272 (1) (2) 0 ...
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... Test information Fig 17. Duty cycle definition PMV30XN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 X ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot023_fw © ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMV30XN v.1 20110622 PMV30XN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 June 2011 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV30XN All rights reserved. Date of release: 22 June 2011 Document identifier: PMV30XN ...