PMZ350XN NXP Semiconductors, PMZ350XN Datasheet - Page 6

• Manufacturer Part Number: PMZ350XN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ350XN_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(X)
I
I
D
D
2.5
1.5
0.5
2.5
1.5
0.5
2
1
0
2
1
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
0
j
j
= 25 C
= 25 C and 150 C; V
1
0.5
V
GS
(V) = 4.5
2
1
25 C
DS
> I
3
D
R
1.5
Tj = 150 C
DSon
3.5
4
V
V
DS
GS
03ao00
03ao02
(V)
2.5
1.8
(V)
3
Rev. 01 — 21 February 2008
2
2
5
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
( )
Dson
a
0.8
0.6
0.4
0.2
1.8
1.2
0.6
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
0
60
j
= 25 C
=
N-channel TrenchMOS standard level FET
----------------------------- -
R
DSon 25 C
V
R
GS
0.5
DSon
(V) = 2.5
0
1
60
1.5
PMZ350XN
120
3
© NXP B.V. 2008. All rights reserved.
2
T
j
I
D
( C)
03ao01
03al00
(A)
3.5
4.5
180
2.5
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