PSMN013-100PS NXP Semiconductors, PSMN013-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100PS
• Description: Standard level N-channel MOSFET in TO220 package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN013-100PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
R
(mΩ)
(A)
DS on
I
D
200
160
120
45
35
25
15
80
40
5
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
4
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
8
…continued
12
2
20
16
3
V
10
All information provided in this document is subject to legal disclaimers.
V
GS
003a a d577
003a a d585
V
GS
DS
(V) = 4
(V)
(V)
5.5
4.5
Conditions
I
see
I
V
S
S
Rev. 3 — 29 September 2011
6
5
GS
20
= 15 A; V
= 25 A; dI
4
Figure 17
= 0 V; V
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
GS
S
DS
/dt = 100 A/µs;
= 0 V; T
= 50 V
Fig 6.
Fig 8.
(pF)
5000
4000
3000
2000
1000
(S )
g
C
150
120
fs
j
90
60
30
= 25 °C;
0
function of gate-source voltage; typical values
drain current; typical values
Input and reverse transfer capacitances as a
Forward transconductance as a function of
0
0
30
2
PSMN013-100PS
60
4
Min
-
-
-
90
6
Typ
0.85
52
109
120
© NXP B.V. 2011. All rights reserved.
8
003a a d580
003a a d586
V
I
D
GS
C
Max
1.2
-
-
C
(A)
rs s
is s
(V)
150
10
Unit
V
ns
nC
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