PSMN013-100PS NXP Semiconductors, PSMN013-100PS Datasheet - Page 8

Standard level N-channel MOSFET in TO220 package qualified to 175C

PSMN013-100PS

Manufacturer Part Number
PSMN013-100PS
Description
Standard level N-channel MOSFET in TO220 package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PSMN013-100PS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
(A)
10
10
10
10
10
10
D
I
100
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
0
0
2
2
T
min
j
= 175 °C
typ
4
4
max
V
V
All information provided in this document is subject to legal disclaimers.
GS
003a a d582
25 °C
GS
(V)
(V)
03aa35
Rev. 3 — 29 September 2011
6
6
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN013-100PS
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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