PSMN013-100XS NXP Semiconductors, PSMN013-100XS Datasheet - Page 2

• Manufacturer Part Number: PSMN013-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-100XS
Preliminary data sheet
Pin
1
2
3
mb
Type number
PSMN013-100XS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; isolated
TO-220F
Package
Name
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
GS
GS
mb
mb
GS
sup
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; unclamped; R
Rev. 1 — 13 December 2011
p
p
Simplified outline
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
SOT186A (TO-220F)
= 25 °C; see
= 100 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
1
GS
mb
2
D
GS
= 20 kΩ
3
= 35.2 A;
Figure 1
= 50 Ω; see
Figure 1
Figure 4
PSMN013-100XS
Figure 3
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
G
mbb076
© NXP B.V. 2011. All rights reserved.
D
S
175
Version
SOT186A
Max
100
100
20
35.2
24.9
141
48.4
175
260
40.3
141
180
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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