PSMN013-100XS NXP Semiconductors, PSMN013-100XS Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN013-100XS
Preliminary data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
GS(th)
R
(mΩ)
(V)
DSon
30
25
20
15
10
5
4
3
2
1
0
5
0
−60
junction temperature
of drain current; typical values
0
4.6
20
0
40
4.8
60
60
5.0
max
min
typ
80
V
120
GS
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
003aag611
(V) = 10
100
003aad280
T
j
(°C)
I
D
5.5
6.0
(A)
Rev. 1 — 13 December 2011
120
180
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.5
1.5
0.5
−1
−2
−3
−4
−5
−6
3
2
1
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
PSMN013-100XS
2
min
60
typ
4
120
max
V
© NXP B.V. 2011. All rights reserved.
GS
003aag654
T
j
(V)
( ° C)
03aa35
180
6
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