PSMN2R6-40YS NXP Semiconductors, PSMN2R6-40YS Datasheet - Page 6

• Manufacturer Part Number: PSMN2R6-40YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
PSMN2R6-40YS_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
(A)
I
150
D
120
90
60
30
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
8
0.5
6
…continued
1
Conditions
I
see
I
V
I
V
S
S
S
DS
DS
1.5
V
= 25 A; V
= 50 A; dI
= 50 A; dI
GS
Figure 17
= 20 V
= 20 V; T
003aad190
(V) = 4.5
V
DS
(V)
5.5
5
GS
S
S
2
Rev. 01 — 23 June 2009
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
j
= 25 °C;
Fig 6.
6000
(pF)
5000
4000
3000
2000
GS
GS
C
= 0 V;
= 0 V;
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
3
PSMN2R6-40YS
Min
-
-
-
6
Typ
0.78
45
47
9
© NXP B.V. 2009. All rights reserved.
V
003aad196
GS
Max
1.2
-
-
C
C
(V)
rss
iss
12
Unit
V
ns
nC
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