PSMN6R0-30YL NXP Semiconductors, PSMN6R0-30YL Datasheet - Page 6

• Manufacturer Part Number: PSMN6R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN6R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
100
(A)
DSon
I
20
15
10
80
60
40
20
D
5
0
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
10
Characteristics
4.5
Parameter
source-drain voltage
reverse recovery time
recovered charge
V
2
GS
10
(V) = 3.2
V
GS
4
(V) = 3.2
…continued
20
2.6
2.4
3
2.8
6
30
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
DS
003aac625
003aac630
I
= 25 A; V
= 20 A; dI
V
D
DS
(A)
Figure 17
= 20 V
4.5
10
(V)
10
40
Rev. 04 — 10 March 2011
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 30 V 6 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
j
= 25 °C;
(pF)
2500
2000
1500
1000
C
500
(A)
I
80
60
40
20
D
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
GS
0
0
= 0 V;
2
C
iss
1
C
rss
T
PSMN6R0-30YL
j
= 150 °C
4
Min
-
-
-
2
6
Typ
0.88
32
25
3
© NXP B.V. 2011. All rights reserved.
25 °C
8
V
003aac627
003aac636
V
GS
GS
Max
1.2
-
-
(V)
(V)
10
4
Unit
V
ns
nC
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