PSMN6R0-30YL NXP Semiconductors, PSMN6R0-30YL Datasheet - Page 7

• Manufacturer Part Number: PSMN6R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN6R0-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
I
g
(S)
D
80
60
40
20
-1
-2
-3
-4
-5
-6
fs
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
min
20
1
40
typ
2
V
I
All information provided in this document is subject to legal disclaimers.
D
GS
003aac629
003aab271
(A)
max
(V)
60
Rev. 04 — 10 March 2011
3
N-channel 30 V 6 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
10
8
6
4
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
0
4
PSMN6R0-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2011. All rights reserved.
V
003aac628
003a a c337
T
GS
j
(°C)
(V)
180
10
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