BLA6G1011-200R NXP Semiconductors, BLA6G1011-200R Datasheet - Page 4

• Manufacturer Part Number: BLA6G1011-200R
• Description: 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLA6G1011-200R_L-200RG_LS-200RG
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLA6G1011-200R, BLA6G1011L-200RG and BLA6G1011LS-200RG are enhanced
rugged devices and are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: t
V
Table 8.
Typical values unless otherwise specified.
f
MHz
BLA6G1011-200R
1030
1060
1090
BLA6G1011L-200RG and BLA6G1011LS-200RG
1030
1060
1090
Fig 1.
DS
= 28 V; I
Definition of transistor impedance
Typical impedance
Dq
All information provided in this document is subject to legal disclaimers.
= 100 mA; P
Rev. 4 — 9 November 2011
L
= 200 W; f = 1030 MHz to 1090 MHz.
Z

0.57  j0.94
0.70  j1.13
0.80  j1.53
0.69  j2.18
0.86  j2.36
1.12  j2.54
S
BLA6G1011(L)(S)-200R(G)
gate
Z
S
001aaf059
Z
drain
L
Z

0.80  j0.68
0.84  j0.52
0.86  j0.35
0.84  j0.59
0.85  j0.73
0.86  j0.87
L
Power LDMOS transistor
p
= 50 s;  = 2 %;
© NXP B.V. 2011. All rights reserved.
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