BLA6G1011-200R NXP Semiconductors, BLA6G1011-200R Datasheet - Page 6

• Manufacturer Part Number: BLA6G1011-200R
• Description: 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLA6G1011-200R_L-200RG_LS-200RG
Product data sheet
Fig 6.
See
Component layout for class-AB application circuit
Table 9
7.3 Application circuit
for list of components.
C1
Remark: For BLA6G1011-200R with straight leads
Table 9.
See
Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB);
thickness = 0.64 mm
[1]
[2]
Component Description
C1, C6
C2
C3
C4
C5, C8
C7
R1
C2
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Figure
C3
6.
List of components
multilayer ceramic chip capacitor 10 F
multilayer ceramic chip capacitor 68 pF
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 3.9 pF
multilayer ceramic chip capacitor 30 pF
electrolytic capacitor
SMD resistor
All information provided in this document is subject to legal disclaimers.
C4
Rev. 4 — 9 November 2011
R1
BLA6G1011(L)(S)-200R(G)
Value
470 F; 63 V
12 
C5
[1]
[1]
[1]
[2]

r
Power LDMOS transistor
Remarks
TDK
1206
= 6.15 F/m;
C6
C8
© NXP B.V. 2011. All rights reserved.
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001aak270
C7
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