BLF145 NXP Semiconductors, BLF145 Datasheet - Page 3

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range

BLF145

Manufacturer Part Number
BLF145
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
handbook, halfpage
V
V
I
P
T
T
R
R
D
stg
j
DSS
GSS
tot
HF power MOS transistor
th j-mb
th mb-h
SYMBOL
SYMBOL
(1) Current is this area may be limited by R
(2) T
10
(A)
I D
10
1
mb
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
Fig.2 DC SOAR.
PARAMETER
10
(2)
V DS (V)
DSon
.
MRA901
PARAMETER
10
Rev. 04 - 5 January 2007
2
T
mb
25 C
CONDITIONS
handbook, halfpage
(1) Short-time operation during mismatch.
(2) Continuous operation.
P tot
(W)
100
80
60
40
20
0
Fig.3 Power derating curves.
40
(1)
(2)
65
MIN.
80
VALUE
2.6
0.3
65
6
68
150
200
Product specification
20
120
MAX.
T h ( C)
BLF145
MGP035
3 of 15
UNIT
160
K/W
K/W
V
V
A
W
C
C
UNIT

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