BLF2425M6LS180P NXP Semiconductors, BLF2425M6LS180P Datasheet - Page 6

180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz

BLF2425M6LS180P

Manufacturer Part Number
BLF2425M6LS180P
Description
180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLF2425M6LS180P
Manufacturer:
NXP
Quantity:
1 400
Part Number:
BLF2425M6LS180P,11
Quantity:
1 400
Part Number:
BLF2425M6LS180P:11
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NXP Semiconductors
8. Package outline
Fig 3.
BLF2425M6L180P_25M6LS180P
Objective data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
OUTLINE
VERSION
SOT539A
Package outline SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
0.540
13.72
e
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
Rev. 1 — 7 February 2012
E 1
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
BLF2425M6L(S)180P
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
Power LDMOS transistor
41.28
41.02
1.625
1.615
B
U 1
M
0.405
0.395
10.29
10.03
E 1
U 2
c
© NXP B.V. 2012. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
6 of 11

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