BLF2425M6LS180P NXP Semiconductors, BLF2425M6LS180P Datasheet - Page 8

• Manufacturer Part Number: BLF2425M6LS180P
• Description: 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF2425M6L180P_25M6LS180P
Objective data sheet
CAUTION
Document ID
BLF2425M6L180P_25M6LS180P v.1
Revision history
Table 10.
Acronym
CW
DC
ESD
ISM
LDMOS
LDMOST
RF
SMD
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
Release date
20120207
All information provided in this document is subject to legal disclaimers.
Description
Continuous Wave
Direct Current
ElectroStatic Discharge
Industrial, Scientific and Medical
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Rev. 1 — 7 February 2012
Data sheet status
Objective data sheet
BLF2425M6L(S)180P
Change notice
-
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
Supersedes
-
8 of 11