BLF245 NXP Semiconductors, BLF245 Datasheet - Page 4

• Manufacturer Part Number: BLF245
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 02
V
I
I
V
g
R
I
C
C
C
F
j
DSS
GSS
DSX
GS
SYMBOL
fs
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF power MOS transistor
GS
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
V
V
V
V
input and output power matched for:
I
R1 = 1 k ; T
see Fig.14
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 10 mA; V
= 0 mA; V
= 1.5 A; V
= 1.5 A; V
= 1 A; V
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
4
D
DS
DS
DS
DS
DS
= 10 mA
CONDITIONS
DS
DS
GS
h
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; P
DS
DS
= 25 C; f = 175 MHz;
GROUP
DS
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
W
= 0
O
Q
R
U
P
S
T
V
X
Y
Z
L
= 30 W;
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
1.2
MIN. TYP. MAX. UNIT
LIMITS
(V)
1.9
0.4
10
125
75
7
2
Product specification
BLF245
2
1
4.5
100
0.75
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
dB
A