BLF246 NXP Semiconductors, BLF246 Datasheet - Page 13

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap

BLF246

Manufacturer Part Number
BLF246
Description
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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PACKAGE OUTLINE
2003 Aug 05
Flanged ceramic package; 2 mounting holes; 4 leads
VHF power MOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT121B
0.286
0.243
7.27
6.17
A
0.229
0.219
5.82
5.56
b
0.006
0.004
0.16
0.10
c
A
H
IEC
12.86
12.59
0.506
0.496
H
D
4
1
12.83
12.57
0.505
0.495
D 1
0.105
0.095
2.67
2.41
JEDEC
F
28.45
25.52
1.120
1.005
D 1
U 1
REFERENCES
D
q
H
0.130
0.120
3.30
3.05
p
0.175
0.154
4.45
3.91
EIAJ
13
Q
3
2
C
18.42
0.725
b
q
B
p
F
24.90
24.63
0.98
0.97
U 1
U 2
A
w 1
w 2
0.255
0.245
M
6.48
6.22
M
U 2
A
C
M
M
12.32
12.06
0.485
0.475
0
B
U 3
M
PROJECTION
EUROPEAN
scale
0.25
0.01
w 1
5
U 3
0.51
0.02
w 2
10 mm
Product specification
Q
c
45
ISSUE DATE
BLF246
99-03-29
SOT121B

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