BLF246B NXP Semiconductors, BLF246B Datasheet

Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap

BLF246B

Manufacturer Part Number
BLF246B
Description
Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 2001 Oct 10
andbook, halfpage
DATA SHEET
BLF246B
VHF push-pull power MOS
transistor
DISCRETE SEMICONDUCTORS
M3D075
2003 Aug 04

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BLF246B Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 M3D075 2003 Aug 04 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste (MHz) (V) 175 28 2 Product specification BLF246B MBB157 MBC826 CAUTION WARNING P G ...

Page 3

... Continuous operation. DSon (2) Short-time operation during mismatch. Total device; both sections equally loaded. 3 Product specification MIN. 65 VALUE 1.35 0.25 ( 120 Fig.3 Power derating curves. BLF246B MAX. UNIT 130 W 150 C 200 C UNIT K/W K/W MGR738 160 ...

Page 4

... MHz MHz MHz GS DS LIMITS (V) GROUP MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 4 Product specification MIN. TYP 1.2 1.8 0.4 10 125 75 11 LIMITS (V) MIN. O 3.3 P 3.4 Q 3.5 R 3.6 S 3.7 T 3.8 U 3.9 V 4.0 W 4.1 X 4.2 Y 4.3 Z 4.4 BLF246B MAX. UNIT 4 0. MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 ...

Page 5

... Drain current as a function of gate-source voltage; typical values per section. 240 C 180 120 MHz. Input and output capacitance as functions of drain-source voltage; typical values per section. BLF246B MGR740 20 MGR742 (V) ...

Page 6

... RF performance in CW operation in a push-pull, common source, class-B circuit. T unless otherwise specified. MODE OF OPERATION CW, class-B Ruggedness in class-B operation The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 175 MHz at rated output power. DS 2003 Aug 04 ...

Page 7

... (%) ( (W) 50 mA; Class-B operation Fig.10 Load power as a function of input power; 7 Product specification 100 0.5 1 175 MHz. typical values per section. BLF246B MGR745 2.0 2 (W) ...

Page 8

... Fig.11 Test circuit for class-B operation. 8 Product specification V D C11 C12 C13 C14 R7 C15 L13 L16 L18 L20 C25 L22 L23 C21 C22 C23 C24 C26 L17 L19 L21 L24 L14 C16 C17 R8 C18 C19 C20 V D MGR749 BLF246B 50 output ...

Page 9

... Product specification VALUE DIMENSIONS CATALOGUE No. 2222 809 08002 2222 809 08003 2222 852 47104 2222 852 47103 111 2.5 mm length 111 mm ext. dia 2.8 mm 4312 020 36642 length 6.5 mm int. dia leads 4.5); thickness r BLF246B ...

Page 10

... R2 C6 L14 C10 L10 C9 L11 C16 C17 L15 Product specification rivet strap rivet strap rivet V D L22 C13 C11 C12 R7 L20 L13 C21 C23 L18 C25 L19 C26 C24 C22 L21 R3 L23 L24 C20 C19 C18 MGR750 V D BLF246B ...

Page 11

... mA (total device). L (series components); typical values per section 100 200 300 = mA (total device). L typical values per section. BLF246B MGR747 400 f (MHz) MGR748 400 f (MHz) ...

Page 12

... 12.83 3.33 4.32 24.97 10.34 18.42 3.07 4.06 12.57 24.71 10.08 0.131 0.170 0.407 0.505 0.983 0.725 0.495 0.121 0.160 0.973 0.397 EUROPEAN PROJECTION Product specification BLF246B SOT161A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-03-29 99-10-04 ...

Page 13

... Product specification BLF246B DEFINITION These products are not Philips Semiconductors ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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