BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet - Page 3

• Manufacturer Part Number: BLF7G20LS-90P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G20L-90P_7G20LS-90P
Product data sheet
Table 5.
Table 6.
T
Table 7.
f = 1805 MHz to 1880 MHz; RF performance at V
2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
R
Symbol Parameter
V
V
I
I
g
Symbol
Mode of operation: GSM EDGE; P
G
ACPR
EVM
EVM
Mode of operation: CW; P
G
I
R
RL

ACPR

DSS
DSX
GSS
j
fs
D
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
p
p
= 25
in
rms
M
400k
600k

C; per section unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz)
adjacent channel power ratio (600 kHz)
RMS EDGE signal distortion error
peak EDGE signal distortion error
power gain
drain efficiency
All information provided in this document is subject to legal disclaimers.
BLF7G20L-90P; BLF7G20LS-90P
Rev. 2 — 20 October 2011
L(AV)
= 84 W
L(AV)
= 40 W
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 1.75 A
DS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 28 V; I
GS(th)
GS(th)
Conditions
Conditions
T
D
case
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 50 mA
= 2.5 A
Dq
= 28 V
= 80 C; P
= 0 V
= 550 mA; T
Power LDMOS transistor
L
Min Typ
18.3 19.5
-
38
-
-
-
17.8 19
51
-
= 90 W
Min Typ
65
1.5
-
8.2
-
-
-
case
© NXP B.V. 2011. All rights reserved.
15
41
61
74
2.5
8
54
-
1.9
-
9.5
-
3.8
0.28
= 25

C;
Max
-
8
-
58
70.5 dBc
3.8
12.5
-
-
Typ
0.49 K/W
Max Unit
-
2.3
2
-
200
-
-
3 of 15
Unit
V
V
A
A
nA
S

Unit
dB
dB
%
dBc
%
%
dB
%