BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet - Page 6

• Manufacturer Part Number: BLF7G20LS-90P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P
Product data sheet
Fig 7.
(dB)
G
p
21
19
17
15
0
V
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
DS
G
η
D
p
= 28 V; I
7.5 Single carrier IS-95
Dq
16
= 600 mA; f = 1880 MHz.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Fig 6. GSM EDGE RMS EDGE and peak EDGE as function of load power; typical values
V
32
DS
= 28 V; I
P
All information provided in this document is subject to legal disclaimers.
L
001aal873
(W)
BLF7G20L-90P; BLF7G20LS-90P
Dq
EVM
(%)
= 550 mA; f = 1880 MHz.
Rev. 2 — 20 October 2011
48
25
20
15
10
60
40
20
0
5
0
(%)
0
η
D
10
Fig 8.
20
ACPR
(dBc)
−30
−40
−50
−60
−70
−80
30
0
V
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
DS
40
= 28 V; I
50
Dq
EVM
EVM
16
P
= 600 mA; f = 1880 MHz.
L
001aal872
rms
60
M
(W)
70
Power LDMOS transistor
32
ACPR
ACPR
© NXP B.V. 2011. All rights reserved.
P
L
001aal874
(W)
1980k
885k
48
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