BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet - Page 4

• Manufacturer Part Number: BLF7G20LS-90P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 One-tone CW
The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
V
V
V
f = 1427 MHz.
DS
DS
DS
= 28 V; I
= 28 V; I
= 28 V; I
typical values
V
DS
= 28 V; I
Dq
Dq
Dq
All information provided in this document is subject to legal disclaimers.
= 550 mA; P
= 380 mA; P
= 380 mA; P
BLF7G20L-90P; BLF7G20LS-90P
Dq
(dB)
G
= 550 mA; f = 1880 MHz.
Rev. 2 — 20 October 2011
p
22
21
20
19
18
17
16
15
0
L
L
L
G
η
= 90 W (CW), f = 1805 MHz,
= 40 W (CW, half device), f = 2110 MHz,
= 55 W (CW pulse, 10 %, 100 s, halve device),
D
p
20
40
60
80
001aal867
P
L
(W)
100
Power LDMOS transistor
70
60
50
40
30
20
10
0
(%)
η
D
© NXP B.V. 2011. All rights reserved.
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