BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet - Page 7

• Manufacturer Part Number: BLF7G20LS-90P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P
Product data sheet
Fig 10. Single carrier W-CDMA power gain and drain
(dB)
G
p
21
19
17
15
0
V
efficiency as function of load power;
typical values
DS
G
η
D
p
= 28 V; I
10
7.6 Single carrier W-CDMA
20
Dq
= 600 mA; f = 1880 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
Fig 9. Single carrier IS-95 peak-to-average power ratio as a function of load power;
30
40
typical values
V
DS
50
= 28 V; I
All information provided in this document is subject to legal disclaimers.
P
L
001aal876
60
(W)
BLF7G20L-90P; BLF7G20LS-90P
Dq
PAR
= 600 mA; f = 1880 MHz.
Rev. 2 — 20 October 2011
70
11
10
60
40
20
0
9
8
7
6
5
4
(%)
0
η
D
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
16
(dBc)
−20
−36
−52
−68
0
V
10 MHz as function of load power;
typical values
DS
= 28 V; I
10
32
20
Dq
P
L
= 600 mA; f = 1880 MHz.
001aal875
(W)
30
48
Power LDMOS transistor
40
50
© NXP B.V. 2011. All rights reserved.
ACPR
ACPR
P
L
001aal877
60
(W)
10M
5M
70
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