BLF7G20LS-90P NXP Semiconductors, BLF7G20LS-90P Datasheet - Page 5

• Manufacturer Part Number: BLF7G20LS-90P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P
Product data sheet
Fig 2. Two-tone CW power gain and drain efficiency
Fig 4.
(dB)
(dB)
G
G
p
p
22
21
20
19
18
17
16
15
21
20
19
18
17
16
15
14
as function of load power; typical values
0
V
f
0
V
GSM EDGE power gain and drain efficiency as
function of load power; typical values
2
DS
DS
= 1880.05 MHz.
G
η
G
η
D
D
p
p
= 28 V; I
= 28 V; I
10
10
7.3 Two-tone CW
7.4 GSM EDGE
20
20
Dq
Dq
= 550 mA; f
= 550 mA; f = 1880 MHz.
30
30
40
40
1
= 1879.95 MHz;
50
50
All information provided in this document is subject to legal disclaimers.
P
P
L
L
001aal868
001aal870
60
60
(W)
(W)
BLF7G20L-90P; BLF7G20LS-90P
Rev. 2 — 20 October 2011
70
70
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
(%)
(%)
η
η
D
D
Fig 3. Two-tone CW intermodulation distortion as a
Fig 5.
ACPR
(dBc)
(dBc)
IMD
−20
−40
−60
−80
−50
−60
−70
−80
0
function of load power; typical values
0
0
V
f
V
GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
2
DS
DS
= 1880.05 MHz.
= 28 V; I
= 28 V; I
10
10
ACPR
ACPR
20
20
Dq
Dq
= 550 mA; f
= 550 mA; f = 1880 MHz.
400k
600k
30
30
Power LDMOS transistor
40
40
1
= 1879.95 MHz;
50
50
© NXP B.V. 2011. All rights reserved.
P
P
L
L
001aal869
001aal871
60
60
(W)
(W)
IMD3
IMD5
IMD7
70
70
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