BLF8G10LS-160 NXP Semiconductors, BLF8G10LS-160 Datasheet - Page 5

• Manufacturer Part Number: BLF8G10LS-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF8G10L-160_8G10LS-160
Product data sheet
Fig 4.
Fig 5.
(dB)
G
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
21
20
19
18
17
16
15
38
V
Input return loss as a function of output power; typical values
V
Power gain and drain efficiency as function of
output power; typical values
DS
DS
= 30 V; I
= 30 V; I
7.4 2-Carrier W-CDMA
G
η
D
p
Dq
Dq
42
= 1100 mA.
= 1100 mA.
(1)
(2)
(3)
RL
(dB)
46
-10
-13
-16
-19
-22
-25
in
P
44
L
All information provided in this document is subject to legal disclaimers.
aaa-001290
(dBm)
(3)
(2)
(1)
BLF8G10L-160; BLF8G10LS-160
46
Rev. 3 — 16 February 2012
50
60
50
40
30
20
10
0
η
(%)
D
48
Fig 6.
50
(dB)
G
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
p
21
20
19
18
17
16
15
0
V
Power gain and drain efficiency as function of
output power; typical values
52
DS
aaa-001289
P
L
= 30 V; I
(dBm)
G
η
D
p
20
54
Dq
(1)
= 1100 mA.
(2)
40
(3)
Power LDMOS transistor
60
© NXP B.V. 2012. All rights reserved.
80
aaa-001291
P
L
(W)
100
60
50
40
30
20
10
0
η
(%)
D
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