BLM6G10-30G NXP Semiconductors, BLM6G10-30G Datasheet - Page 4

• Manufacturer Part Number: BLM6G10-30G
• Description: 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
8. Application information
BLM6G10-30_BLM6G10-30G
Product data sheet
8.1 Ruggedness
8.2 Impedance information
Table 6.
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f
V
The BLMG10-30 and BLM6G10-30G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Table 7.
[1]
[2]
Symbol Parameter
P
G
RL
IMD3
f
MHz
850
860

ACPR
880
900
920
940
960
980
DS
DS
D
L(AV)
p
in
= 28 V; I
Device input impedance as measured from gate to ground.
Test circuit impedance as measured from drain to ground.
= 32 V; I
average output power
power gain
input return loss
drain efficiency
third-order intermodulation distortion P
adjacent channel power ratio
Characteristics
Typical impedance
Dq1
Dq1
= 105 mA; I
All information provided in this document is subject to legal disclaimers.
= 105 mA; I
Rev. 2 — 1 March 2011
Dq2
BLM6G10-30; BLM6G10-30G
Dq2
= 250 mA; T
Z

43.6  j0
43.5  j0.25
43.4  j0.4
43.4  j0.6
43.5  j0.9
43.6  j1.3
43.6  j1.7
43.6  j2
1
i
= 288 mA; P
[1]
= 922.5 MHz; f
h
= 25
P
P
P
Conditions
P
L
W-CDMA 860 MHz - 960 MHz power MMIC
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)

2
= 30 W (CW).
C unless otherwise specified.
= 932.5 MHz; f
= 2 W
= 2 W
= 2 W
= 2 W
= 2 W
Z

3  j0.8
3.2  j0.7
3.4  j0.5
3.5  j0.2
3.45  j0
3.2  j0.1
3  j0.1
2.7  j0.1
3
L
Min
-
27
-
-
-
10
= 947.5 MHz; f
[2]
Typ
2
29
15
11.5
48.5 45
52
© NXP B.V. 2011. All rights reserved.
4
Max
-
31
12
-
48.5
= 957.5 MHz;
4 of 15
Unit
W
dB
dB
%
dBc
dBc